發光薄膜、發光陣列薄膜、微發光二極體陣列與其製法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109146589

專利證號

I 810507

專利獲證名稱

發光薄膜、發光陣列薄膜、微發光二極體陣列與其製法

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2023/08/01

技術說明

我們提出以高效率無稀土螢光溶液旋塗成膜於基板上，並藉由黃光微影及反應離子蝕刻來將螢光膜形成螢光陣列於基板上，以藍光光源激發可看出方形綠光的激發光產生，並且也嘗試以微發光二極體試片上製作為螢光陣列，初步檢測結果可於綠光波段觀察到明顯的像素圖案。紅光也是類似的作法、藍光則是將綠光及紅光的螢光材料蝕刻掉。將紅綠螢光染料塗佈至LED之chip上，及完成一個micro-LED可調控的全彩像素點。We propose to spin-coat a high-efficiency rare-earth-free fluorescent solution onto a substrate, and form a fluorescent film on the substrate by lithography and etching. The pixel of the green light can be seen by excitation with a blue light source, and it is also possible to produce a fluorescent array on the micro-light-emitting diode test piece, and as a result, a clear pixel pattern can be observed in the green light band. Pixels of red light can be formed in the same way. For blue -light pixels, we can etch away fluorescent materials of green and red light. The red-green fluorescent dye is applied to the LED chip and a micro-LED controlled full-color pixel is completed.

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