Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefore,and method for forming amorphous ferroelectric film

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

ITRC

專利證號

6514814B2

專利獲證名稱

Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefore,and method for forming amorphous ferroelectric film

專利所屬機關 (申請機關)

財團法人國家實驗研究院

獲證日期

2003/02/04

技術說明

Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefore,and method for forming amorphous ferroelectric film Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefore,and method for forming amorphous ferroelectric film

備註

連絡單位 (專責單位/部門名稱)

國研院技術移轉中心

連絡電話

02-66300686

網址